Long‐channel In0.7Ga0.3As/In0.52Al0.48As quantum‐well MOSFETs on InP substrate with record μn_eff = 6960 cm2/V‐s. Issue 18 (14th August 2017)

• Record Type: Journal Article
• Authors: Son, S.‐W.; Shin, S.H.; Park, J.H.; Baek, J.‐M.; Kim, D.‐K.; Lee, J.‐H.; Kim, T.‐W.; Kim, D.‐H.
• Is Part Of: Electronics letters. Volume 53:Issue 18(2017)
• Page Start: 1279
• Page End: 1281
• Publication Date: 2017-08-14
• Subjects: semiconductor quantum wells -- MOSFET -- indium compounds -- gallium arsenide -- aluminium compounds -- III‐V semiconductors; QW MOSFETs -- long‐channel quantum‐well metal‐oxide‐semiconductor field‐effect‐transistors -- electrostatic integrity -- temperature 293 K to 298 K -- In0.7Ga0.3As‐In0.52Al0.48As -- InP; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.0773
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Long‐channel In0.7 Ga0.3 As/In0.52 Al0.48 As quantum‐well (QW) metal‐oxide‐semiconductor field‐effect‐transistors (MOSFETs) on InP substrate have been fabricated and characterised. The fabricated device with Lg = 4 μm exhibits excellent maximum transconductance ( gm_max ) in excess of 0.48 mS/μm at V DS = 0.95 V, together with reasonably good electrostatic integrity of drain‐induced‐barrier‐lowering < 40 mV/V and subthreshold‐swing <100 mV/decade. Besides, the effective mobility ( μn_eff ) of the same device has been extracted, revealing that the device in this work yields excellent μn_eff = 6960 cm 2 /V‐s at room temperature. To the knowledge of the authors, the value of μn_eff in this work is the highest in any surface‐channel InGaAs MOSFET technology.