Cite
HARVARD Citation
Son, S. et al. (2017). Long‐channel In0.7Ga0.3As/In0.52Al0.48As quantum‐well MOSFETs on InP substrate with record μn_eff = 6960 cm2/V‐s. Electronics letters. 53 (18), pp. 1279-1281. [Online].
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Son, S. et al. (2017). Long‐channel In0.7Ga0.3As/In0.52Al0.48As quantum‐well MOSFETs on InP substrate with record μn_eff = 6960 cm2/V‐s. Electronics letters. 53 (18), pp. 1279-1281. [Online].