Long‐channel In0.7Ga0.3As/In0.52Al0.48As quantum‐well MOSFETs on InP substrate with record μn_eff = 6960 cm2/V‐s. Issue 18 (14th August 2017) - Son, S.‐W.
Abstract : Long‐channel In0.7 Ga0.3 As/In0.52 Al0.48 As quantum‐well (QW) metal‐oxide‐semiconductor field‐effect‐transistors (MOSFETs) on InP substrate have been fabricated and characterised. The fabricated device with Lg = 4 μm exhibits excellent maximum transconductance ( gm_max ) in excess of 0.48 mS/μm at V DS = 0.95 V, together with reasonably good electrostatic integrity of drain‐induced‐barrier‐lowering < 40 mV/V and subthreshold‐swing <100 mV/decade. Besides, the effective mobility ( μn_eff ) of the same device has been extracted, revealing that the device in this work yields excellent μn_eff = 6960 cm 2 /V‐s at room temperature. To the knowledge of the authors, the value of μn_eff in this work is the highest in any surface‐channel InGaAs MOSFET technology.