Cite
MLA Citation
Prashanth Kumar and Brinda Bhowmick. “Suppression of ambipolar conduction and investigation of RF performance characteristics of gate‐drain underlap SiGe Schottky barrier field effect transistor.” Micro & nano letters, vol. 13, 2018, pp. 626–630. http://access.bl.uk/ark:/81055/vdc_100124364213.0x00003b