Suppression of ambipolar conduction and investigation of RF performance characteristics of gate‐drain underlap SiGe Schottky barrier field effect transistor. (1st May 2018)

• Record Type: Journal Article
• Authors: Kumar, Prashanth; Bhowmick, Brinda
• Is Part Of: Micro & nano letters. Volume 13:Number 5(2018)
• Page Start: 626
• Page End: 630
• Publication Date: 2018-05-01
• Subjects: Ge‐Si alloys -- Schottky gate field effect transistors -- Schottky barriers -- high‐k dielectric thin films -- low‐k dielectric thin films; ambipolar conduction suppression -- RF performance characteristics -- gate‐drain underlap silicon germanium Schottky barrier field effect transistor -- heterostructure gate‐drain UL SB FET -- high‐k heterostructure SB FET -- low‐k HSBFET -- gate‐drain UL junction -- electrical characteristics -- on‐current -- subthreshold swing -- ambipolar conduction -- bandgap silicon germanium material -- silicon germanium channel -- low‐barrier height -- carrier injection -- hole injection -- negative gate bias -- UL‐HSBFET device -- drain‐channel junction -- radiofrequency performance -- improved carrier capability -- TCAD simulator -- size 20 nm -- size 5 nm -- size 10 nm -- size 15 nm -- Si‐Ge; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2017.0895
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : In this work, a hetero structure gate‐drain underlap (UL) Schottky barrier (SB) Field Effect Transistor (FET) is explored to achieve high device performance compared with high‐k and low‐k hetero structure SB FET (HSBFET). The effects of gate drain UL junction on the performances of UL‐HSBFETs have been studied in terms of electrical characteristics including on‐current ( I on ), subthreshold swing, I on / I off ratio, ambipolar conduction, and I off current. The low on‐state current of silicon‐based SB FETs can be enhanced by introducing the low bandgap silicon germanium material. Gate‐drain UL and silicon germanium channel with low barrier height provides less tunnelling width which enhances the carrier injection at on‐state compared with low‐k and high‐k HSBFET. Further, the proposed UL‐HSBFET suppresses the ambipolar conduction due to holes. In contrast to conventional high‐k and low‐k HSBFET that suffers from severe ambipolar conduction, the UL‐HSBFET device reduces the conduction at drain‐channel junction with increasing the UL length to 5, 10, 15, and 20 nm. This provides better radio frequency performances with improved carrier capability of the proposed device. Therefore, UL‐HSBFET device can be one of the best possible competitor for high‐frequency application. The performance comparison of all the devices is carried out using Technology Computer‐Aided Design (TCAD) simulator.