Experimentally verified drain‐current model for variable barrier transistor. Issue 17 (5th August 2015)

• Record Type: Journal Article
• Authors: Moldovan, O.; Lime, F.; Barraud, S.; Smaani, B.; Latreche, S.; Iñiguez, B.
• Is Part Of: Electronics letters. Volume 51:Issue 17(2015)
• Page Start: 1364
• Page End: 1366
• Publication Date: 2015-08-05
• Subjects: semiconductor device models -- MOSFET; experimental verification -- drain‐current model -- variable barrier transistor -- analytical model -- VBT -- metal–oxide–semiconductor field‐effect transistor -- MOSFET; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.1475
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A simple analytical model for the computation of the drain current in a new type of transistor is presented, the variable barrier transistor (VBT). A good agreement between the results and experimental data, from two different VBTs, proves the accuracy of this model. The experimental measurements show that the I ON / I OFF ratio of this device can be improved, as compared with the classical transistor. The model correctly reproduces these results.