Cite
APA Citation
Hao, R., Wu, D., Fu, K., Song, L., Chen, F., Zhao, J., Du, Z., Zhang, B., Wang, Q., Yu, G., Cheng, K., Cai, Y., Zhang, X., & Zhang, B. (2018). 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current. Electronics letters, 54(13), 848–849. http://access.bl.uk/ark:/81055/vdc_100124811803.0x000055