Cite
HARVARD Citation
Hao, R. et al. (2018). 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current. Electronics letters. 54 (13), pp. 848-849. [Online].
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Hao, R. et al. (2018). 10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current. Electronics letters. 54 (13), pp. 848-849. [Online].