Cite
MLA Citation
Takafumi Okuda et al.. “Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing.” Applied physics express, vol. 9, n.d., p. . http://access.bl.uk/ark:/81055/vdc_100125484365.0x00004d
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Takafumi Okuda et al.. “Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing.” Applied physics express, vol. 9, n.d., p. . http://access.bl.uk/ark:/81055/vdc_100125484365.0x00004d