Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing. (30th March 2016)

• Record Type: Journal Article
• Authors: Okuda, Takafumi; Kobayashi, Takuma; Kimoto, Tsunenobu; Suda, Jun
• Is Part Of: Applied physics express. Volume 9:Number 5(2016:May)
• Publication Date: 2016-03-30
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.9.051301
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We investigated surface passivation on 4H-SiC epitaxial layers with deposited or thermally grown SiO2 followed by POCl3 annealing. The measured carrier lifetime in a p-type epilayer with deposited SiO2 was limited to 0.5 µs and it was improved to 3.0 µs after POCl3 annealing. In an n-type epilayer, a measured carrier lifetime of 5.8 µs was improved to 12 µs after POCl3 annealing. We found a clear relationship between the measured carrier lifetime and the interface state density at SiO2 /n-SiC after POCl3 annealing, suggesting that the reduction in interface state density lowered the surface recombination velocity on the 4H-SiC.