Cite
HARVARD Citation
Okuda, T. et al. (n.d.). Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing. Applied physics express. p. . [Online].
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Okuda, T. et al. (n.d.). Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing. Applied physics express. p. . [Online].