Cite
MLA Citation
Keisuke Shinohara et al.. “(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity.” ECS transactions, vol. 92, 2019, pp. 103–108. http://access.bl.uk/ark:/81055/vdc_100117436920.0x00000a