Cite
APA Citation
Shinohara, K., King, C., Regan, E., Gomez, M. P., Bergman, J., Carter, A., Arias, A., Urteaga, M., Brar, B., Page, R., Chaudhuri, R., Islam, M., Xing, H. G., & Jena, D. (2019). (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity. ECS transactions, 92, 103–108. http://access.bl.uk/ark:/81055/vdc_100117436920.0x00000a