Cite
HARVARD Citation
Shinohara, K. et al. (2019). (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity. ECS transactions. pp. 103-108. [Online].
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Shinohara, K. et al. (2019). (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity. ECS transactions. pp. 103-108. [Online].