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APA Citation
Toriumi, A., Lee, C., & Nishimura, T. (2015). (Invited) Effects of Ge Substrate Annealing in H2 on Electron Mobility as well as on Junction Leakage in n-channel Ge MOSFETs. ECS transactions, 69, 287–296. http://access.bl.uk/ark:/81055/vdc_100117136494.0x000021