(Invited) Effects of Ge Substrate Annealing in H2 on Electron Mobility as well as on Junction Leakage in n-channel Ge MOSFETs. (8th September 2015)

• Record Type: Journal Article
• Authors: Toriumi, Akira; Lee, Choonghyun; Nishimura, Tomonori
• Is Part Of: ECS transactions. Volume 69:Number 5(2015)
• Page Start: 287
• Page End: 296
• Publication Date: 2015-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06905.0287ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This paper discusses H2 annealing effect of Ge substrate on carrier mobility and junction leakage current in Ge MOSFETs. We found that H2 annealing of Ge wafer improved the electron mobility in Ge n-channel MOSFETs, while it degrades n + /p junction leakage current. Although we have not clarified the mechanisms causing such significant effects, we have found that the oxygen content in Ge surface region is phenomenologically related to above effects of Ge in H2 annealing.