Cite
HARVARD Citation
Toriumi, A. et al. (2015). (Invited) Effects of Ge Substrate Annealing in H2 on Electron Mobility as well as on Junction Leakage in n-channel Ge MOSFETs. ECS transactions. pp. 287-296. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Toriumi, A. et al. (2015). (Invited) Effects of Ge Substrate Annealing in H2 on Electron Mobility as well as on Junction Leakage in n-channel Ge MOSFETs. ECS transactions. pp. 287-296. [Online].