Cite
APA Citation
Lin, T., Uenuma, M., Fururkawa, M., Bermundo, J. P. S., Ishikawan, Y., & Uraoka, Y. (2019). effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. ECS journal of solid state science and technology, 8, P388–P391. http://access.bl.uk/ark:/81055/vdc_100117129912.0x00000c