Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing. (2nd July 2019)

• Record Type: Journal Article
• Authors: Lin, Tengda; Uenuma, Mutsunori; Fururkawa, Masaaki; Bermundo, Juan Paolo Soria; Ishikawan, Yasuaki; Uraoka, Yukiharu
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 8(2019)
• Page Start: P388
• Page End: P391
• Publication Date: 2019-07-02
• Subjects: Dielectrics - SiO2 -- Electron Devices -- MOS -- Post Annealing -- Trapping; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0021908jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Constant current biased voltage versus injection electron fluence (V-F) and High-Low frequency C-V measurements were conducted for GaN-SiO2 system treated by high pressure water vapor annealing (HPWVA). Combined with a kinetic rate analysis based on electron trapping and trap generation, a smaller amount of interface traps as well as a less severe trapping behavior is confirmed. As a result, HPWVA can be a promising method for improving both bulk and interface qualities of GaN/SiO2 MOS structure, which plays an important role in power electronics.