Cite
MLA Citation
Jan Sobus et al.. “Field‐Effect Transistors: High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence (Adv. Funct. Mater. 28/2018).” Advanced functional materials, vol. 28, 2018, p. n/a. http://access.bl.uk/ark:/81055/vdc_100066530116.0x000017