Field‐Effect Transistors: High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence (Adv. Funct. Mater. 28/2018). (9th July 2018)

• Record Type: Journal Article
• Authors: Sobus, Jan; Bencheikh, Fatima; Mamada, Masashi; Wawrzinek, Robert; Ribierre, Jean‐Charles; Adachi, Chihaya; Lo, Shih‐Chun; Namdas, Ebinazar B.
• Is Part Of: Advanced functional materials. Volume 28:Number 28(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-07-09
• Subjects: benzothiophene -- light‐emitting field‐effect transistors -- organic electronics -- thermally activated delayed fluorescence -- zinc‐tin oxide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201870193
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Light‐Emitting Field‐Effect Transistors (LEFETs) are a novel class of optoelectronic devices combining switching and light emission properties in a single material stack. In article number 1800340, Chihaya Adachi, Shih‐Chun Lo, Ebinazar B. Namdas, and co‐workers succeed in constructing the first p‐type and n‐type LEFETs employing TADF organic material. Experimental data is supported by numerical simulation, leading to proper localization of the recombination zone and identification of loss pathways.