This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Corrigendum to' X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)'. Materials science in semiconductor processing 119 (2020) 105, 262. (February 2021)
Record Type:
Journal Article
Title:
Corrigendum to' X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)'. Materials science in semiconductor processing 119 (2020) 105, 262. (February 2021)
Main Title:
Corrigendum to' X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)'. Materials science in semiconductor processing 119 (2020) 105, 262