Corrigendum to' X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)'. Materials science in semiconductor processing 119 (2020) 105, 262. (February 2021) - Meyer, Kevin; Buchholz, Martin; Uxa, Daniel; Dörrer, Lars; Schmidt, Harald; Schaadt, Daniel M.