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APA Citation
Renz, A., Vavasour, O., Gammon, P., Li, F., Dai, T., Antoniou, M., Baker, G., Bashar, E., Grant, N., Murphy, J., Mawby, P., & Shah, V. (2021). the improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials science in semiconductor processing, 122, . http://access.bl.uk/ark:/81055/vdc_100117402728.0x00001e