Cite
HARVARD Citation
Renz, A. et al. (2021). The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials science in semiconductor processing. p. . [Online].
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Renz, A. et al. (2021). The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials science in semiconductor processing. p. . [Online].