A long lifetime, low error rate RRAM design with self-repair module*Project supported by the New Century Excellent Talents in University (No. NCET-12-0165) and the National Natural Science Foundation of China (Nos. 61472123, 61272396). (November 2016)

• Record Type: Journal Article
• Authors: You 尤, Zhiqiang 志强; Hu 胡, Fei 飞; Huang 黄, Liming 黎明; Liu 刘, Peng 鹏; Kuang 邝, Jishun 继顺; Li 李, Shiying 实英
• Is Part Of: Journal of semiconductors. Volume 37:Number 11(2016:Nov.)
• Publication Date: 2016-11
• Subjects: 85.35.−p -- 85.30.De; self-repair -- ECC -- RRAM -- memristor; 1265D; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/37/11/115004
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Resistive random access memory (RRAM) is one of the promising candidates for future universal memory. However, it suffers from serious error rate and endurance problems. Therefore, exploring a technical solution is greatly demanded to enhance endurance and reduce error rate. In this paper, we propose a reliable RRAM architecture that includes two reliability modules: error correction code (ECC) and self-repair modules. The ECC module is used to detect errors and decrease error rate. The self-repair module, which is proposed for the first time for RRAM, can get the information of error bits and repair wear-out cells by a repair voltage. Simulation results show that the proposed architecture can achieve lowest error rate and longest lifetime compared to previous reliable designs.