1. A long lifetime, low error rate RRAM design with self-repair module*Project supported by the New Century Excellent Talents in University (No. NCET-12-0165) and the National Natural Science Foundation of China (Nos. 61472123, 61272396). (November 2016) Authors: You 尤, Zhiqiang 志强; Hu 胡, Fei 飞; Huang 黄, Liming 黎明; Liu 刘, Peng 鹏; Kuang 邝, Jishun 继顺; Li 李, Shiying 实英 Journal: Journal of semiconductors Issue: Volume 37:Number 11(2016:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A low standby-power fast carbon nanotube ternary SRAM cell with improved stability *Project supported by the National Natural Science Foundation of China (Nos. 61474068, 61234002, 61404076), the S&T Plan of Zhejiang Provincial Science and Technology Department (No. 2016C31078), and the K.C. Wong Magna Fund in Ningbo University, China. (August 2018) Authors: Li, Gang; Wang, Pengjun; Kang, Yaopeng; Zhang, Yuejun Journal: Journal of semiconductors Issue: Volume 39:Number 8(2018:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. An effective approach to improve split-gate flash product data retention. (October 2017) Authors: Wei, Dailong; Cao, Zigui; Tang, Zhilin Journal: Journal of semiconductors Issue: Volume 38:Number 10(2017:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗