A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode. (November 2020)

• Record Type: Journal Article
• Authors: Susinni, G.; Rizzo, S.A.; Iannuzzo, F.; Raciti, A.
• Is Part Of: Microelectronics and reliability. Volume 114(2020)
• Publication Date: 2020-11
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113845
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.