Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode. (October 2018)

• Record Type: Journal Article
• Authors: Dey, Swagata; Chakraborty, Vedatrayee; Mukhopadhyay, Bratati; Sen, Gopa
• Is Part Of: Journal of semiconductors. Volume 39:Number 10(2018:Oct.)
• Publication Date: 2018-10
• Subjects: DBQW -- MQW -- RTD -- NDR -- tunneling current density; 2560; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/39/10/104003
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge1− z C z on Si1− x − y Ge x Sn y heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.