Fault protection for a SiC MOSFET based on gate voltage subjected to short circuit type II. (April 2020)

• Record Type: Journal Article
• Authors: Liao, Xinglin; Shen, Qiping; Hu, Yaogang; Yang, Chao; Chen, Xingang; Li, Hui
• Is Part Of: Microelectronics and reliability. Volume 107(2020)
• Publication Date: 2020-04
• Subjects: SiC MOSFET -- Fault protection -- Gate voltage; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113624
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Given its small chip area and high current density, the fault protection of SiC MOSFET is a serious challenge. In this paper, a gate voltage-based fault protection method for a SiC MOSFET subjected to short circuit type II also called fault under load is proposed. The circuit implementation of the proposed method is analyzed in detail. A test with a voltage of 200 V is conducted. Experimental results verify the effectiveness of the proposed method. It is exhibited the fault response time of the proposed method is less than 1 μs, which is very fast to protect a device and is conducive to the reliable and safe operation of SiC MOSFETs.