Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices. (November 2020)

• Record Type: Journal Article
• Authors: Xi, K.; Bi, J.S.; Xu, Y.N.; Li, Y.D.; Zhang, Z.G.; Liu, M.
• Is Part Of: Microelectronics and reliability. Volume 114(2020)
• Publication Date: 2020-11
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113882
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated by X-ray irradiation with doses ranging from 50 to 1000 krad. The electrical characteristics of the devices are measured at each dose step and are compared to those before X-ray exposure. Applying non-zero gate stress during irradiation significantly accelerates the degradation process, and the device fails with an unusable memory window at a TID dose of 500 krad. The electric field in the surrounding oxides plays a key role in the observed degradation. Highlights: The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated. Applying non-zero gate stress during irradiation significantly accelerates the degradation process due to the electric field in the surrounding oxides.