Cite
MLA Citation
Minaxi Dassi et al.. “Erratum: A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications (2020 Semicond. Sci. Technol.35 129601).” Semiconductor science and technology, vol. 35, 2020, p. . http://access.bl.uk/ark:/81055/vdc_100112673178.0x000053