Erratum: A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications (2020 Semicond. Sci. Technol.35 129601). (19th October 2020)

Record Type:
Journal Article
Title:
Erratum: A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications (2020 Semicond. Sci. Technol.35 129601). (19th October 2020)
Main Title:
Erratum: A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications (2020 Semicond. Sci. Technol.35 129601)
Authors:
Dassi, Minaxi
Madan, Jaya
Pandey, Rahul
Sharma, Rajnish
Abstract:
Is Part Of:
Semiconductor science and technology. Volume 35:Number 12(2020)
Journal:
Semiconductor science and technology
Issue:
Volume 35:Number 12(2020)
Issue Display:
Volume 35, Issue 12 (2020)
Year:
2020
Volume:
35
Issue:
12
Issue Sort Value:
2020-0035-0012-0000
Page Start:
Page End:
Publication Date:
2020-10-19
Subjects:
Semiconductors -- Periodicals
621.38152
Journal URLs:
http://iopscience.iop.org/0268-1242/1 ↗
http://ioppublishing.org/ ↗
DOI:
10.1088/1361-6641/abbaca ↗
Languages:
English
ISSNs:
0268-1242
Deposit Type:
Legaldeposit
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:
British Library DSC - BLDSS-3PM
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Ingest File:
14541.xml