Cite
HARVARD Citation
Geng, W. et al. (2020). Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects. Acta materialia. pp. 68-76. [Online].
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Geng, W. et al. (2020). Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects. Acta materialia. pp. 68-76. [Online].