High-energy proton irradiation effects on GaN hybrid-drain-embedded gate injection transistors. (July 2020)

• Record Type: Journal Article
• Authors: Floriduz, Alessandro; Devine, James D.
• Is Part Of: Microelectronics and reliability. Volume 110(2020)
• Publication Date: 2020-07
• Subjects: Proton irradiation effects -- GaN -- HEMT -- Hybrid-drain-embedded gate injection transistors -- LED power supply; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113656
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The characterization of commercial-grade power transistors upon high levels of particle irradiation is required to enable radiation tolerant LED power supplies for the new luminaires of CERN accelerator tunnels, which represent a harsh environment for semiconductor devices. This work describes the effects of 24 GeV/ c proton irradiation on commercial GaN hybrid-drain-embedded gate injection transistors (HD-GITs) after a fluence of 5.9 × 10 14 p/cm 2 . Measurements of drain leakage current, threshold voltage and I ds − V ds curves show that only a minor variation occurs in the electrical properties of GaN HD-GITs after the considered fluence; for example, an average increase of ≈11–13 mV is found in the threshold voltage upon irradiation. We also put forward a physical explanation of the observed degradation caused by proton irradiation; in particular, the electron drift velocity in the 2DEG channel at high electric fields appears to decrease due to a radiation-induced increase in phonon relaxation rate. Finally, an AC/DC LED power supply with current control using GaN HD-GITs is proposed for the new luminaires of CERN tunnels, meeting the requirements in terms of radiation hardness and light quality. Highlights: GaN hybrid-drain-embedded gate injection transistors are very tolerant to radiation. Small increase in drain leakage current after proton fluence of 5.9 × 10 14 p/cm 2 Negligible variations in R on and threshold voltage after the same fluence Limited reduction of drain current in saturation region upon irradiation A rad-hard power supply for CERN tunnels using GaN transistors is proposed.