Recovery investigation of NBTI-induced traps in n-MOSFET devices. (July 2020)

• Record Type: Journal Article
• Authors: Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Messaoud, Dhiaelhak; Chenouf, Amel; Tahi, Hakim; Boubaaya, Mohamed; Timlelt, Hakima
• Is Part Of: Microelectronics and reliability. Volume 110(2020)
• Publication Date: 2020-07
• Subjects: NBTI -- n-MOSFET -- Turn around phenomenon -- Permanent component -- Cyclic component -- Recoverable component; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113703
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to reveal the existence of turn around phenomenon during stress phase. At first stage of stress, threshold voltage ( V th ) shifts positively, followed later by a negative shift. Furthermore, recovery phase has shown, for the first time, the contribution of three components to V th shift (Δ V th ) in n-MOSFET. One component is permanent (Δ V th P ) and dominated by interface traps, created during stress at the Si / SiO 2 interface. The other components are oxide traps, generated in the interfacial oxide region. Both traps are positively charged; one is cyclic (Δ V th C ), while the other is totally recoverable (Δ V th R ). Highlights: NBTI stress in nMOSFET. NBTI-induced turn around phenomenon in nMOSFET. NBTI-induced permanent component in nMOSFET. NBTI-induced recoverable component in nMOSFET. NBTI-induced cyclic component in nMOSFET.