Recovery investigation of NBTI-induced traps in n-MOSFET devices. (July 2020) - Djezzar, Boualem
Abstract: Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to reveal the existence of turn around phenomenon during stress phase. At first stage of stress, threshold voltage ( V th ) shifts positively, followed later by a negative shift. Furthermore, recovery phase has shown, for the first time, the contribution of three components to V th shift (Δ V th ) in n-MOSFET. One component is permanent (Δ V th P ) and dominated by interface traps, created during stress at the Si / SiO 2 interface. The other components are oxide traps, generated in the interfacial oxide region. Both traps are positively charged; one is cyclic (Δ V th C ), while the other is totally recoverable (Δ V th R ). Highlights: NBTI stress in nMOSFET. NBTI-induced turn around phenomenon in nMOSFET. NBTI-induced permanent component in nMOSFET. NBTI-induced recoverable component in nMOSFET. NBTI-induced cyclic component in nMOSFET.