Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. (September 2018)

• Record Type: Journal Article
• Authors: Yu, Qingkui; Sun, Yi; Li, Zheng; Mei, Bo; Li, Xiaoliang; Lv, He; Li, Pengwei; Tang, Min
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 952
• Page End: 956
• Publication Date: 2018-09
• Subjects: GaAs -- Displacement damage -- Proton -- NIEL; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.07.083
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: To improve the displacement damage test method for compound semiconductor devices in space applications, the degradation of GaAs devices caused by protons with energy ranging from 50 MeV to 190 MeV was analyzed based on experimental and simulation results. Proton experimental results showed that degradation caused by high-energy proton was less than that caused by low-energy proton. The Geant4 simulation results indicated that the Non-ionizing Energy Loss was dominated by Coulomb scattering at low proton energy. The degradation of GaAs devices were thus more influenced by displacement damage dose induced by Coulomb scattering. The equivalent displacement damage dose induced by Coulomb scattering can be utilized to evaluate displacement damage in GaAs devices intended for space application. Highlights: The NIEL deposited by Coulomb scattering dominate the degradation of GaAs devices. The equivalent displacement damage dose method was proposed. The conclusion is approved by experiment and simulation results.