Cite
HARVARD Citation
Yu, Q. et al. (2018). Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. Microelectronics and reliability. pp. 952-956. [Online].
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Yu, Q. et al. (2018). Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. Microelectronics and reliability. pp. 952-956. [Online].