Cite
HARVARD Citation
Lv, Y. et al. (2019). Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2. Semiconductor science and technology. p. . [Online].
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Lv, Y. et al. (2019). Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2. Semiconductor science and technology. p. . [Online].