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APA Citation
Cui, P., Mercante, A., Lin, G., Zhang, J., Yao, P., Prather, D. W., & Zeng, Y. (2019). high-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg. Applied physics express, 12, . http://access.bl.uk/ark:/81055/vdc_100092776824.0x000009