Cite
HARVARD Citation
Cui, P. et al. (2019). High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg. Applied physics express. p. . [Online].
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Cui, P. et al. (2019). High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg. Applied physics express. p. . [Online].