Cite
HARVARD Citation
Chini, A. et al. (2018). Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation. Materials science in semiconductor processing. pp. 127-131. [Online].
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Chini, A. et al. (2018). Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation. Materials science in semiconductor processing. pp. 127-131. [Online].