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MLA Citation
Zhiyuan Bai et al.. “Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination.” Superlattices and microstructures, vol. 114, 2018, pp. 143–153. http://access.bl.uk/ark:/81055/vdc_100056540465.0x000039