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APA Citation
Bai, Z., Du, J., Xin, Q., Li, R., & Yu, Q. (2018). numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination. Superlattices and microstructures, 114, 143–153. http://access.bl.uk/ark:/81055/vdc_100056540465.0x000039