Cite
HARVARD Citation
Bai, Z. et al. (2018). Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination. Superlattices and microstructures. pp. 143-153. [Online].
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Bai, Z. et al. (2018). Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination. Superlattices and microstructures. pp. 143-153. [Online].