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Bing Ren et al.. “High-quality SiNx/p-GaN metal-insulator-semiconductor interface with low-density trap states.” Journal of physics, vol. 52, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100087647005.0x000061
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Bing Ren et al.. “High-quality SiNx/p-GaN metal-insulator-semiconductor interface with low-density trap states.” Journal of physics, vol. 52, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100087647005.0x000061