High-quality SiNx/p-GaN metal-insulator-semiconductor interface with low-density trap states. (21st December 2018)

• Record Type: Journal Article
• Authors: Ren, Bing; Liao, Meiyong; Sumiya, Masatomo; Su, Jin; Liu, Xinke; Koide, Yasuo; Sang, Liwen
• Is Part Of: Journal of physics. Volume 52:Number 8(2019)
• Publication Date: 2018-12-21
• Subjects: p-GaN -- MIS -- interface; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aaf5ba
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We report on a high-quality p -GaN metal-insulator-semiconductor (MIS) capacitors with sharp interface morphology and the lowest interface trap density by using SiN x as the gate dielectric layer. Transmission electron microscopy and x-ray photoelectron spectroscopy (XPS) analysis revealed a high-quality interface morphology with the effective removal of carbon and oxygen impurities. Better than the interface properties of Al2 O3, SiO2, and CaF2 / p -GaN metal-oxide-semiconductor (MOS) or MIS capacitors, the capacitance-voltage measurements of SiN x / p -GaN showed negligible electrical hysteresis after a two-step surface pre-treatment, leading to the lowest trapped charge density of 5 × 10 10 cm −2 . The interface state density distribution was also reduced to be ~1–2 × 10 12 cm −2 · eV −1 at E t – E v = 0.2–0.45 eV and 3–5 × 10 12 cm −2 · eV −1 near the valance-band edge after the treatments. The achievement of the high-quality MIS interface was attributed to the suppression of the Mg-Ga-O interfacial disordered layer by the effective surface treatments and oxygen-free deposition process, which was usually observed at Al2 O3 / p -GaN MOS interface.