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HARVARD Citation
Ren, B. et al. (2019). High-quality SiNx/p-GaN metal-insulator-semiconductor interface with low-density trap states. Journal of physics. p. . [Online].
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Ren, B. et al. (2019). High-quality SiNx/p-GaN metal-insulator-semiconductor interface with low-density trap states. Journal of physics. p. . [Online].