Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3D charge trap flash memory. (11th September 2018)

• Record Type: Journal Article
• Authors: Choi, Bongsik; Lee, Jiyong; Yoon, Jinsu; Jeon, Minsu; Lee, Yongwoo; Han, Jungmin; Lee, Jieun; Park, Jinhee; Kim, Yeamin; Kim, Dong Myong; Kim, Dae Hwan; Chung, Sungyong; Lim, Chan; Choi, Sung-Jin
• Is Part Of: Semiconductor science and technology. Volume 33:Number 10(2018:Oct.)
• Publication Date: 2018-09-11
• Subjects: 3D NAND -- charge trap memory -- charge loss -- retention -- SONOS -- charge spreading; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aade29
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Charge spreading behavior within a few seconds, referred to as early retention, was comprehensively investigated in 24 word-line stacked tube-type 3D NAND flash memory. We thoroughly explored the charge spreading behavior from the perspectives of both electron and hole spreading in 3D NAND flash memory with different charge trap layer thicknesses at various programming and erasing levels for solid and checkerboard patterns to provide guidelines for minimizing and optimizing the charge spreading.